High Resolution Analytical Scanning Electron Microscope:
from Nano-imaging to Chemical and Structural Analyses
| ZEISS 1550VP Field Emission SEM - Oxford EDS - HKL EBSD |
Instruments
ZEISS 1550 VP FESEM, equipped with in-lens SE, below-lens SE, variable pressure SE, Robinson-type BSE detectors
Oxford X-Max SDD X-ray Energy Dispersive Spectrometer (EDS) system
HKL Electron Back Scatter Diffraction (EBSD) system, including a Forward Scatter Electron (FSE) detector
Imaging capabilities
High resolution secondary electron imaging with In-Lens detector (spec: 1 nm at 20kV)
Low voltage imaging (200 V - 5 kV) - better surface imaging due to reduced beam penetration
Compositional contrast imaging - BSE
Orientation contrast imaging - FSE
Variable pressure secondary electron imaging (3 Pa - 100 Pa)
Cathodoluminescence (CL) imaging
STEM imaging of TEM specimens
Chemical analysis - EDS
Quantitative elemental analysis with a relative accuracy of better than 5% and detection limit of better than 0.5% can be readily obtained
X-ray mapping
Structural analysis - EBSD
Orientation mapping - texture analysis
Phase identification at sub-micron scale
Image Album
High resolution
image revealing nano-crystals covering up Fe oxide
particle, © Chi Ma
Low voltage SE image
(obtaining at 300 V) showing surface details of kaolinite plates,
© Chi Ma
Cathodoluminescence (CL) image of benitoite. © Chi Ma
STEM image of borosilicate fibers. © Chi Ma
Electron backscatter diffraction pattern of silicon.